Zn3As2 Sputtering Targets
Zn3As2 Sputtering Targets
| Zn3As2 Sputtering Targets | |
| Product No | NRE-43628 |
| CAS No. | 12006-40-5 |
| Formula | Zn3As2 |
| Molecular Weight | 345.98 |
| Purity | >99.9% |
| Density | 5.53 g/cm3 |
| Thickness | 3 mm ± 0.5mm (can be customized) |
| Diameter | 50 mm ± 1mm (can be customized) |
| Shape | Round |
| Resistivity | NA |
| Thermal Conductivity | NA |
Zn3As2 Sputtering Targets
Introduction:
Zinc arsenide (Zn₃As₂) is a compound semiconductor known for its unique electronic and optical properties. Sputtering targets made from Zn₃As₂ are utilized in physical vapor deposition (PVD) processes to create thin films for various advanced applications. This material is particularly valued in the fields of optoelectronics and semiconductor technology.
Applications
Semiconductor Devices: Zn₃As₂ is used in the fabrication of semiconductor devices, including diodes and transistors. Its properties allow for efficient charge transport and improved device performance.
Optoelectronic Applications: The compound is employed in the production of optoelectronic devices, such as photodetectors and light-emitting diodes (LEDs), leveraging its direct bandgap and ability to emit light in the infrared spectrum.
Solar Cells: Zn₃As₂ films can be utilized in the development of thin-film solar cells, contributing to improved efficiency in converting sunlight into electrical energy.
Thermal Imaging: Due to its semiconductor properties, Zn₃As₂ can be used in thermal imaging applications, enhancing the sensitivity and resolution of infrared cameras.
Integrated Circuits: The compound is explored for use in advanced integrated circuits, where its unique electrical characteristics can enhance performance in high-speed applications.
Overall, Zn₃As₂ sputtering targets play a crucial role in the development of advanced semiconductor and optoelectronic technologies, making them valuable in research and commercial applications.
