Aluminum Nitride Powder / AlN Powder (AlN, 99.5%, Hexagonal)

Aluminum Nitride Powder (AlN) Application:

Aluminum nitride powder is emerging as an attractive material, particularly in the form of a nanopowder. It is an important material for electronic and optoelectronic devices. It has the largest band gap of any group III nitride and a very low dielectric constant. These properties make Aluminum nitride powder the ideal material for use as an electronic substrate and packaging material for integrated circuits. In addition, aluminum nitride has a low coefficient of thermal expansion (4.3 • 10-6 K-1), making it a potential solution to thermal coupling problems between the substrate and the semiconductor and to semiconductor cooling problems. Caused by integration and micromation. Other important applications of this material include surface acoustic wave devices and damping layers for Group III nitride thin film epitaxy. Other articles report the generation of Aluminum nitride powder dust by a vapor phase reaction between ammonia and aluminum chloride with nitrogen as the residual gas. This process offers the possibility to produce Aluminum nitride powder directly from the vapor phase, avoiding an additional milling step, but usually the resulting material contains ammonium chloride as a by-product. Aluminum nitride can also be synthesized in the reaction between aluminum and urea, which has been the subject of articles published by the authors of this article. There are also many articles in the literature reporting on processes such as ion evaporation or DC arc plasma that require complex equipment and force aluminum to react with ammonia or nitrogen gas under extreme conditions. These methods give good results, but are not used for the mass production of aluminum nitride nanopowders due to cost reasons. The main purpose of this article was to develop a method to obtain a fine and pure AlN nanopowder with an average particle size less than 100 nm and agglomerate size less than 500 nm by a simple and inexpensive synthesis technique. The article also presents the differences between the nitration of alpha and gamma aluminas during the synthesis of aluminum nitride.