Vanadium Silicide Sputtering Targets
Vanadium Silicide Sputtering Targets
Vanadium Silicide Sputtering Targets | |
Product No | NRE-43600 |
CAS No. | 12039-76-8 |
Formula | V3Si |
Molecular Weight | 180.91 |
Purity | >99.9% |
Density | 4.8 g/cm3 |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Vanadium Silicide Sputtering Targets
Introduction:
Vanadium silicide sputtering target is a compound formed from vanadium and silicon, known for its excellent electrical conductivity, thermal stability, and hardness. It plays a significant role in the semiconductor and materials science industries. Sputtering targets made from vanadium silicide are used in physical vapor deposition (PVD) processes to create thin films with specific properties that are advantageous for various high-tech applications.
Applications:
Semiconductor Devices: VSi₂ is utilized in the fabrication of advanced semiconductor devices, particularly in contacts and interconnects, due to its excellent electrical conductivity and thermal stability.
Thin Film Transistors (TFTs): Vanadium silicide thin films are employed in the production of thin film transistors, which are essential components in displays and various electronic devices.
Hard Coatings: Due to its hardness and wear resistance, vanadium silicide can be used to produce hard coatings for cutting tools and industrial machinery, enhancing their durability and performance.
Thermal Barrier Coatings: VSi₂ can serve as a thermal barrier in high-temperature applications, protecting underlying materials from heat damage and improving overall performance.
Magnetic Applications: Vanadium silicide exhibits interesting magnetic properties, making it suitable for applications in magnetic materials and devices.
Research and Development: Vanadium silicide sputtering targets are used in laboratories for research into new materials and technologies, including studies on superconductivity and advanced ceramics.