Titanium Silicide Sputtering Target

Titanium Silicide Sputtering Target

Introduction:

Titanium silicide sputtering target is an intermetallic compound that plays a vital role in semiconductor technology. Known for its excellent electrical conductivity and thermal stability, TiSi₂ is commonly used in the fabrication of integrated circuits and microelectronic devices. Sputtering targets made from titanium silicide are utilized in physical vapor deposition (PVD) processes to create thin films that enhance the performance of various electronic components.

Applications:

Contact Materials: TiSi₂ is primarily used as a contact material in silicon-based integrated circuits, serving as a low-resistance contact to silicon and improving device performance.

Interconnects: The material is employed in the formation of metal interconnects within semiconductor devices, enabling efficient signal transmission and reducing power loss.

Thin Film Transistors: TiSi₂ is used in thin film transistors (TFTs) for displays and other applications, contributing to better electrical characteristics.

Microsensors: Its properties make it suitable for use in microsensors, where reliable electrical performance is essential.

High-Temperature Applications: The thermal stability of titanium silicide allows it to be used in applications where high-temperature resistance is critical.

Advantages

High Purity: Sputtering targets can be produced with high purity, which is crucial for achieving superior film quality in electronic applications.

Controlled Stoichiometry: The sputtering process allows for precise control over the composition of the deposited films, which is essential for optimizing device performance.

Good Adhesion: TiSi₂ films typically exhibit excellent adhesion to silicon substrates, which is beneficial for reliability in semiconductor applications.