Titanium Disilicide Powder / TiSi2 Powder (TiSi2, 30um, 99.5%)

Titanium Disilicide Powder

Titanium Disilicide Powder  (TiSi2) is an inorganic chemical compound. It is the material with the lowest electrical resistivity at room temperature. Titanium disilicide is used in the semiconductor industry.

Applications

Titanium Disilicide (TiSi₂) is an intermetallic compound composed of titanium (Ti) and silicon (Si). In its powder form, TiSi₂ is a gray or black substance, widely recognized for its high melting point, excellent electrical conductivity, and strong mechanical properties. This material has attracted significant interest in both industrial and technological fields due to its unique combination of properties, particularly its behavior as a semiconductor material and its high-temperature stability.

Properties of Titanium Disilicide Powder

High Melting Point: TiSi₂ has a high melting point of around 1,850°C, making it suitable for applications that require stability at high temperatures.

Electrical Conductivity: As an intermetallic compound, TiSi₂ exhibits good electrical conductivity, making it useful in semiconductor applications.

Thermal Stability: TiSi₂ maintains its properties under high thermal conditions, which makes it ideal for use in high-performance electronic devices and in situations where heat resistance is critical.

Hardness and Wear Resistance: TiSi₂ has high hardness and wear resistance, contributing to its suitability in harsh environments.

Chemical Stability: TiSi₂ is relatively chemically stable, particularly in high-temperature applications, where it resists oxidation and corrosion.

Synthesis of Titanium Disilicide Powder

TiSi₂ powder is typically synthesized through the reaction of titanium with silicon under high-temperature conditions. Various methods can be used for its production, including:

High-temperature solid-state reaction: This involves heating titanium and silicon powders together at elevated temperatures to form TiSi₂.

Chemical Vapor Deposition (CVD): In this process, gaseous precursors of titanium and silicon react at high temperatures to form TiSi₂.

Plasma techniques: These methods involve ionizing gases to deposit TiSi₂ onto substrates.

The resulting TiSi₂ powder can be used directly in various applications, or further processed into thin films, coatings, or composites, depending on the intended use.