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Tin Antimonide Sputtering Targets

Tin Antimonide Sputtering Targets

Tin Antimonide Sputtering Targets
Product No NRE-43571
CAS No. 28980-49-6
Formula SnSb
Molecular Weight 240.47
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Tin Antimonide Sputtering Targets

Tin antimonide sputtering targets is a compound known for its interesting electrical and thermal properties, making it suitable for various advanced applications. Here are some key applications of tin antimonide sputtering targets.

Thermoelectric Materials:

SnSb is recognized for its thermoelectric efficiency, particularly in mid-temperature ranges. It can be used in thermoelectric generators and coolers, providing effective energy conversion from heat to electricity.

Optoelectronic Devices:

Tin antimonide has potential applications in optoelectronic devices, such as infrared detectors and emitters. Its properties allow it to be effective in the detection of infrared radiation, which is useful in thermal imaging and sensing technologies.

High-Temperature Superconductors:

Research is ongoing into the use of SnSb in high-temperature superconducting applications, where its unique electronic properties can contribute to enhanced performance in superconducting circuits.

Thin-Film Transistors:

Tin antimonide can be utilized in the fabrication of thin-film transistors (TFTs), which are essential components in display technologies and flexible electronics.

Spintronics:

The magnetic and electronic characteristics of SnSb make it a candidate for spintronic applications, where the manipulation of electron spin is exploited for advanced computing and memory devices.

Alloying and Composite Materials:

SnSb is often studied for its role in alloying with other materials to enhance properties, such as electrical conductivity and thermal performance in various composite systems.

Sputtering Process

The sputtering process for tin antimonide involves using a SnSb target that, when bombarded with ions, releases atoms to deposit onto substrates.

 

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