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MnBi2Te4 Sputtering Targets

MnBi2Te4 Sputtering Targets

MnBi2Te4 Sputtering Targets
Product No NRE-43496
CAS No. NA
Formula MnBi2Te4
Molecular Weight NA
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

MnBi2Te4 Sputtering Targets

Introduction

MnBi2Te4 sputtering targets are materials used in thin film deposition, notable for their unique properties as a topological insulator and magnet. This compound, consisting of manganese, bismuth, and tellurium, has gained attention in materials science for its potential applications in spintronics and quantum computing.

Applications

Topological Insulators:

MnBi₂Te₄ is used in the development of topological insulator materials, which exhibit robust surface states that are protected from scattering, enabling advanced electronic applications.

Spintronics:

Employed in spintronic devices that leverage electron spin for information processing, offering the potential for faster and more efficient data storage.

Quantum Computing:

Its unique properties make it a candidate for quantum computing applications, particularly in creating qubits that are less susceptible to decoherence.

Magnetic Materials:

The compound exhibits ferromagnetic behavior, making it suitable for magnetic sensors and devices, enhancing performance in various magnetic applications.

Research and Development:

Frequently used in research to explore new phenomena related to topological phases and magnetic properties, driving innovation in next-generation materials.

Conclusion

MnBi₂Te₄ sputtering targets play a significant role in advancing technologies in topological insulators, spintronics, and quantum computing. Their unique combination of electronic and magnetic properties positions them as valuable materials for modern research and manufacturing, paving the way for innovative solutions across various fields.

 

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