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Lead Zirconate Sputtering Target

Lead Zirconate Sputtering Target

Lead Zirconate Sputtering Target
Product No NRE-43087
CAS No. 12060-01-4
Formula PbZrO3
Molecular Weight 346.4 g/mol
Purity 99.9%
Density 7.0 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Electrical Resistivity NA
Electronegativity NA

Lead Zirconate Sputtering Target

Introduction

Lead zirconate sputtering target is a ceramic material known for its ferroelectric properties and high dielectric constant. Sputtering targets made from lead zirconate are utilized in physical vapor deposition (PVD) processes to create thin films that have a wide range of applications in electronics, optics, and materials science.

Applications

Ferroelectric Devices: Lead zirconate is primarily used in ferroelectric capacitors and memory devices due to its ability to switch polarization under an electric field. This makes it suitable for non-volatile memory applications.

Dielectric Capacitors: Its high dielectric constant enhances energy storage in capacitors, making PbZrO₃ films valuable in various electronic applications.

Piezoelectric Sensors and Actuators: Lead zirconate exhibits piezoelectric properties, making it useful in sensors and actuators for applications such as pressure sensors, accelerometers, and transducers.

Thin-Film Photovoltaics: PbZrO₃ can be explored in thin-film solar cells, where its properties may improve efficiency in converting solar energy.

Optoelectronic Devices: Lead zirconate films are utilized in light-emitting devices and photodetectors, contributing to advancements in optical communication and imaging technologies.

Surface Acoustic Wave (SAW) Devices: Due to its piezoelectric nature, lead zirconate is employed in SAW devices for signal processing and telecommunications.

Research Applications: PbZrO₃ is a subject of ongoing research in material science, particularly in the study of ferroelectricity, phase transitions, and thin-film growth techniques.

 

 

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