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Lead Selenide Sputtering Targets

Lead Selenide Sputtering Targets

Lead Selenide Sputtering Targets
Product No NRE-43480
CAS No. 12069-00-0
Formula PbSe
Molecular Weight 286.16
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Lead Selenide Sputtering Targets

Introduction

Lead selenide (PbSe) is a semiconductor material known for its unique electronic and optical properties, particularly in the infrared spectrum. Sputtering targets made from lead selenide are utilized in physical vapor deposition (PVD) processes to create thin films for various applications.

Applications

Infrared Detectors: PbSe is widely used in infrared detectors due to its sensitivity to infrared radiation. This makes it suitable for applications in thermal imaging, gas sensing, and night vision technologies.

Photovoltaic Devices: Lead selenide is a promising material for thin-film solar cells, especially in the mid-infrared range, where it can improve energy conversion efficiency.

Optoelectronic Devices: PbSe is used in various optoelectronic applications, including lasers, light-emitting diodes (LEDs), and photodetectors, owing to its tunable bandgap.

Quantum Dots: Lead selenide quantum dots are explored for use in advanced display technologies and biological imaging, leveraging their size-tunable optical properties.

Thermoelectric Materials: Due to its favorable thermoelectric properties, PbSe can be used in thermoelectric devices for power generation and refrigeration applications.

 

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