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Lanthanum Aluminum Oxide Sputtering Target

Lanthanum Aluminum Oxide Sputtering Target

Lanthanum Aluminum Oxide Sputtering Target
Product No NRE-43080
CAS No. 12003-65-5
Formula LaAlO3
Molecular Weigh 213.89 g/mol
Purity 99.99%
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round

Lanthanum Aluminum Oxide Sputtering Target

LaAlO3 Supttering Target

Introduction

Lanthanum Aluminium Oxide (LaAlO₃) is a compound of lanthanum, aluminum, and oxygen that has gained significant attention in various fields, particularly in materials science and semiconductor manufacturing. It is characterized by its high thermal stability, excellent dielectric properties, and wide bandgap, making it suitable for a variety of applications, especially in thin film technology.

Applications

Dielectric Films: LaAlO₃ is often used as a high-k dielectric material in transistors and capacitors. Its superior insulating properties make it an ideal candidate for advanced microelectronics, where reducing power consumption and improving performance is critical.

Gate Oxides in Transistors: In semiconductor devices, LaAlO₃ can serve as a gate oxide layer. Its high permittivity allows for thinner films while maintaining capacitance, which is essential for modern transistor designs.

Photovoltaics: LaAlO₃ films can enhance the efficiency of solar cells by improving charge separation and transport, leading to better energy conversion rates.

Optical Coatings: The optical properties of LaAlO₃ make it suitable for applications in coatings for lenses and mirrors, where high transparency and durability are required.

MEMS Devices: Micro-Electro-Mechanical Systems (MEMS) benefit from LaAlO₃ for its mechanical stability and insulating properties, which are vital for the performance of micro-scale sensors and actuators.

Superconductors: LaAlO₃ is often used as a substrate material for thin films of high-temperature superconductors, providing a suitable crystalline environment for growth.

Sputtering Process

Sputtering is a widely used technique for depositing thin films of materials, including LaAlO₃. In this process, ions are accelerated towards the target material (LaAlO₃), causing atoms to be ejected from the target and deposit onto a substrate. This method allows for precise control over film thickness and composition, making it ideal for producing high-quality coatings.

 

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