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Indium Gallium Arsenide Powder

Indium Gallium Arsenide Powder

Indium Gallium Arsenide Powder
Product No NRE-26006
CAS 106097-59-0
Purity  >99.9%
Molecular Formula InGaAs
Molecular Weight 259.46 g/mol
Color White Crystalline Powder
Density 5.68 g/cm³
APS < 40 um (can be customized)
Melting Point 844 °C
Boiling Point NA

Indium Gallium Arsenide Powder

Indium gallium arsenide (InGaAs) powder is a compound semiconductor with versatile applications due to its tunable electronic and optical properties.

Semiconductor Devices

High-Speed Electronics: InGaAs is used in high-speed electronic devices where its high electron mobility is advantageous. This includes:

High Electron Mobility Transistors (HEMTs): InGaAs HEMTs are used in microwave and millimeter-wave applications due to their high frequency and low noise performance.

Field-Effect Transistors (FETs): Used in various electronic devices requiring fast switching and high-speed operation.

 Optoelectronics

Photodetectors: InGaAs is widely used in photodetectors due to its sensitivity to infrared wavelengths. Applications include:

Optical Communication: InGaAs photodetectors are used in fiber optic communication systems for high-speed data transmission.

Infrared Imaging: Employed in infrared cameras and thermal imaging systems to detect and measure infrared radiation.

Light-Emitting Diodes (LEDs): InGaAs is used in LEDs that operate in the infrared spectrum, valuable for various communication and sensing applications.

Solar Cells

High-Efficiency Photovoltaics: InGaAs is used in multi-junction solar cells, particularly in space and concentrated solar power applications. Its ability to efficiently absorb infrared light enhances the overall efficiency of solar panels.

Telecommunications

Communication Systems: InGaAs is used in high-speed telecommunications systems, including fiber-optic networks. Its performance in detecting and processing infrared signals makes it suitable for advanced communication technologies.

Spectroscopy

Infrared Spectroscopy: InGaAs detectors are used in infrared spectroscopy for analyzing materials based on their absorption and emission characteristics in the infrared range.

 Material Science and Research

Thin Films and Nanostructures: InGaAs is used to produce thin films and nanostructures for advanced electronic and optoelectronic devices. Research into InGaAs properties and applications contributes to the development of new technologies.

Alloys and Composites: InGaAs is used to create alloys with other semiconductor materials to fine-tune properties for specific applications.

Defense and Aerospace

Surveillance and Imaging: InGaAs sensors are used in defense and aerospace applications, including surveillance systems and night-vision technology, due to their sensitivity to infrared light.

 

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