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Hafnium Boride Sputtering Targets

Hafnium Boride Sputtering Targets

Hafnium Boride Sputtering Targets
Product No NRE-43438
CAS No. 12007-23-7
Formula HfB2
Molecular Weight 200.112
Purity >99.9%
Density 10.5 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Hafnium Boride Sputtering Targets

Introduction

Hafnium boride (HfB₂) sputtering targets are materials used to deposit thin films of hafnium boride onto various substrates through the sputtering process, a physical vapor deposition (PVD) technique. HfB₂ is known for its remarkable properties, including high hardness, excellent thermal stability, and good electrical conductivity. This makes it a valuable material in high-performance applications, particularly in extreme environments.

The unique characteristics of hafnium boride make it suitable for various industrial and technological applications, where durability and performance are critical.

Applications of Hafnium Boride Sputtering Targets

Cutting Tools and Wear-Resistant Coatings:

Industrial Applications: HfB₂ is used in the manufacture of cutting tools and wear-resistant coatings due to its high hardness and resistance to abrasion.

Thermal Protection:

Aerospace and Defense: HfB₂ coatings provide excellent thermal protection in aerospace applications, protecting components from extreme temperatures.

Electrical Contacts:

Conductive Applications: The electrical conductivity of hafnium boride makes it suitable for use in electrical contacts and components, enhancing performance in electronic devices.

Nuclear Applications:

Radiation Shielding: HfB₂ is utilized in nuclear applications for its ability to withstand high radiation levels, making it suitable for use in reactor components.

High-Temperature Applications:

Refractory Coatings: The thermal stability of HfB₂ makes it ideal for refractory coatings in high-temperature environments, such as furnaces and kilns.

Semiconductor Manufacturing:

Dielectrics and Barriers: HfB₂ can be used as a dielectric material or barrier layer in semiconductor applications, contributing to improved device performance.

Electrochemical Applications:

Catalysis: Hafnium boride can be used in catalytic applications, enhancing the efficiency of electrochemical reactions.

 

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