Germanium Wafer
Germanium Wafer | |
Product No | NRE-44012 |
Type | Un-doped |
Crystal method | NA |
Crystal Orientation | <100> |
Thickness | 500 +/- 25 µm |
Diameter (mm) | 50.8mm |
Resistivity | 5-40 Ω-cm |
Surface | Both Side Polished |
Germanium Wafer
Introduction:
Germanium wafer are semiconductor materials made from germanium, a group IV element similar to silicon. Although silicon is more commonly used in the semiconductor industry, germanium has unique properties that make it valuable for specific applications. Germanium wafers are known for their high electron mobility, direct bandgap, and sensitivity to infrared light, making them suitable for various advanced technologies.
Properties
High Electron Mobility: Germanium has higher electron mobility than silicon, allowing for faster electronic devices.
Direct Bandgap: Unlike silicon, germanium has a direct bandgap, making it suitable for optoelectronic applications like photodetectors and lasers.
Sensitivity to Infrared Light: Germanium’s sensitivity to infrared light makes it ideal for applications in optics and photonics.
Applications
Optoelectronics: Used in the production of photodetectors, infrared cameras, and light-emitting diodes (LEDs), leveraging its direct bandgap properties.
High-Speed Electronics: Employed in high-frequency transistors and amplifiers, where its high electron mobility enhances performance.
Solar Cells: Utilized in tandem solar cells, particularly in space applications, where efficiency and weight are critical.
Fiber Optic Communication: Used in components such as lasers and detectors for fiber optic systems, benefiting from its infrared sensitivity.
Semiconductor Devices: Incorporated in bipolar junction transistors (BJTs) and other semiconductor devices where high performance is needed.
Research and Development: Frequently used in laboratories for research in new semiconductor technologies and materials.