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Germanium Nitride Sputtering Targets

Germanium Nitride Sputtering Targets

Germanium Nitride Sputtering Targets
Product No NRE-43433
CAS No. 12065-36-0
Formula Ge3N4
Molecular Weight 273.947 g/mol
Purity >99.9%
Density 5.25 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Germanium Nitride Sputtering Targets

Germanium nitride (Ge3N4) sputtering targets are used in various applications, primarily in the fields of electronics and optoelectronics. Here are some key applications.

Semiconductor Devices: Germanium nitride can be used as a dielectric material in semiconductor devices, providing insulation and improving performance.

Optoelectronic Devices: Ge3N4 is employed in photonic applications, such as waveguides and photodetectors, due to its suitable bandgap properties.

Thin-Film Transistors: It can be used in the fabrication of thin-film transistors (TFTs), particularly in displays and flexible electronics.

Solar Cells: Germanium nitride coatings can enhance the efficiency and stability of solar cells by acting as anti-reflective layers or passivation layers.

Protective Coatings: Its chemical stability makes it suitable for protective coatings in harsh environments, particularly in semiconductor manufacturing.

Sensors: Ge3N4 can be utilized in gas sensors and other sensing devices due to its semiconductor properties.

Overall, the use of germanium nitride sputtering targets contributes to the development of advanced materials in modern electronics and photonics.

 

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