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Barium Manganese Oxide Sputtering Targets

Barium Manganese Oxide Sputtering Targets

Barium Manganese Oxide Sputtering Targets
Product No NRE-43333
CAS No. NA
Formula BaMnO2
Molecular Weight 224.26
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Barium Manganese Oxide Sputtering Targets

Barium manganese oxide sputtering targets are used primarily in the deposition of thin films for various high-tech applications. These targets are used in the process of sputtering, where ions bombard the target material to eject atoms, which then deposit onto a substrate to form a thin film. Here are some key applications.

Electronics and Semiconductor Devices: Barium manganese oxides are used in the production of thin films for electronic components, such as sensors, resistors, and capacitors, due to their unique electrical properties.

Ferroelectric Materials: These oxides can be used to create ferroelectric thin films, which are essential in applications such as non-volatile memory devices (e.g., FeRAM) and piezoelectric devices.

Catalysis: Thin films of barium manganese oxide can be used in catalytic applications, including in reactions for environmental cleanup or energy production.

Optoelectronics: They are also used in optoelectronic devices, where their optical properties can be utilized for light emission or absorption applications.

Energy Storage: In batteries and supercapacitors, these materials can be used to improve performance due to their ability to participate in redox reactions.

Magnetic Applications: The magnetic properties of barium manganese oxide thin films make them suitable for various magnetic devices and applications, including magnetic sensors and spintronic devices.

The specific properties of barium manganese oxides, such as their electrical conductivity, ferroelectricity, and catalytic activity, make them valuable in these high-tech fields.

 

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