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4 inch silicon wafer

4 inch silicon wafer
Product No NRE-44002
Type N-Type
Formula Si
Crystal method CZ
Purity NA
Thickness 250-500μm
Diameter (mm) 4” (100.8mm)
Doping Phosphorous
Resistivity 1-10ohm-cm
RRG (%) ≤12

4 inch silicon wafer

Introduction:

4 inch silicon wafer are widely used in the semiconductor industry and represent a critical step in the evolution of wafer sizes. These wafers serve as substrates for various electronic components and are particularly valued for their balance of cost-effectiveness and scalability. The 4-inch size is a transition point between smaller wafers, used for prototyping and small-scale applications, and larger wafers, which are often used in high-volume manufacturing.

Properties

Material Composition: Typically made from high-purity silicon, either single-crystal (Czochralski or Float Zone methods) or polycrystalline.

Doping: Can be either N-type or P-type, depending on the desired electrical characteristics and application.

Thickness: Usually ranges from 525 to 725 micro meters, providing strength while allowing for various processing techniques.

Applications

Integrated Circuits (ICs): Widely used in the manufacturing of microprocessors, an alog chips, and digital logic circuits.

Power Electronics: Essential for the production of power devices such as MOSFETs and IGBTs, which are crucial in energy management and conversion applications.

MEMS Devices: Used in microelectromechanical systems for sensors and actuators in automotive, medical, and consumer electronics.

Solar Cells: Employed in photovoltaic technologies, particularly in research and small-scale solar cell production.

LEDs and Optoelectronics: Utilized in the fabrication of light-emitting diodes and other optoelectronic components.

Research and Development: Commonly found in laboratories for experimental devices and technology development.

 

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