DSP Silicon Wafer P Type (2″, Boron Doped)

DSP Silicon Wafer P Type

Introduction:

DSP silicon wafer p type with a diameter of 2 inches are important substrates in the semiconductor and microelectronics industries. These wafers are produced using the Cz method, ensuring high purity and excellent crystalline quality. The doping with boron introduces “holes” into the silicon lattice, enabling P-type conductivity, which is essential for various electronic applications. The double-side polishing process enhances surface quality, making these wafers ideal for precision applications.

Properties:

Doping Element: Boron is used to create holes, resulting in P-type conductivity that facilitates positive charge carrier movement.

Size: The 2-inch diameter is suitable for small-scale applications, research, and development projects, allowing for efficient use in various experimental setups.

Double-Side Polished: The polishing of both surfaces improves the wafer’s surface quality, crucial for device performance and fabrication processes.

Applications

Integrated Circuits (ICs): Commonly used in the fabrication of small-scale electronic components, including amplifiers and logic devices.

MEMS Devices: Ideal for microelectromechanical systems used in sensors and actuators, particularly in applications requiring high precision.

Solar Cells: Employed in research and development of photovoltaic devices, where P-type silicon is essential for creating effective p-n junctions.

Bipolar Junction Transistors (BJTs): Used in the production of BJTs, which are critical for amplification and switching applications.

Laboratory Research: Frequently utilized in academic and industrial research settings for developing and testing new semiconductor devices and materials.

Sensors: Integral to various types of sensors, including temperature and pressure sensors, benefiting from the P type characteristics.