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Phosphorus Doped Silicon Wafer (4 inch, N Type)

Phosphorus Doped Silicon Wafer
Product No NRE-44021
CAS NA
Crystal method CZ
Type N-Type
Diameter (mm) 4″ (101.6mm)
Doping Phosphorous
Thickness 250-500μm
Crystal Orientation <100>
Resistivity 1-10ohm-cm
RRG (%) ≤12 %
Oxygen Contents (ppma) 12.5-16.5

Phosphorus Doped Silicon Wafer

Introduction:

Phosphorus doped silicon wafer are a type of N-type semiconductor material created by introducing phosphorus atoms into the silicon lattice. This doping process increases the number of free electrons available for conduction, enhancing the material’s electrical properties. The 4-inch diameter wafers are commonly used in the semiconductor industry, offering a balance between efficient production and integration into various electronic devices.

Properties

High Electron Concentration: Phosphorus acts as a donor, providing extra electrons that significantly increase the electrical conductivity of the silicon.

Shallow Donor Levels: The doping creates energy levels close to the conduction band, allowing for easier excitation of electrons, facilitating efficient charge transport.

Good Thermal Stability: These wafers exhibit excellent thermal stability, making them suitable for various electronic applications.

Applications)

Integrated Circuits (ICs):

Used extensively in the production of microprocessors, memory chips, and logic devices. The high conductivity of phosphorus-doped silicon enhances the performance and speed of these components.

Power Electronics:

Employed in the manufacturing of power transistors, diodes, and rectifiers, where efficient electron flow is essential for energy conversion and management.

Photovoltaic Cells:

Integral in the fabrication of solar cells, particularly for forming p-n junctions that are crucial for effective light absorption and conversion of solar energy into electricity.

Bipolar Junction Transistors (BJTs):

Utilized in the production of BJTs, where the N-type silicon serves as the collector or emitter, enhancing performance in amplification and switching applications.

Microelectromechanical Systems (MEMS):

Used in MEMS devices for applications such as sensors and actuators, taking advantage of the material’s electrical properties for precise operation.

Gas and Temperature Sensors:

Employed in various sensor applications that require sensitivity to environmental changes, leveraging the responsiveness of N-type silicon.

Radio-Frequency Identification (RFID):

Used in RFID technology, benefiting from the reliable conductivity and performance of phosphorus-doped silicon in communication applications.

 

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