Ir80Mn20 sputtering target
Ir80Mn20 sputtering target
| Ir80Mn20 sputtering target | |
| Product No | NRE-43642 |
| CAS No. | NA |
| Formula | NA |
| Molecular Weight | NA |
| Purity | >99.9% |
| Density | NA |
| Thickness | 3 mm ± 0.5mm (can be customized) |
| Diameter | 50 mm ± 1mm (can be customized) |
| Shape | Round |
| Resistivity | NA |
| Thermal Conductivity | NA |
Ir80Mn20 sputtering target
Introduction
IR80Mn20 sputtering target refers to an alloy composed of 80% indium (In) and 20% manganese (Mn). This specific composition is often utilized in sputtering targets for thin film deposition processes. The unique properties of this alloy make it suitable for various advanced applications, particularly in electronics and optoelectronics.
Semiconductor Fabrication:
Used to deposit conductive layers in integrated circuits and other semiconductor devices. The combination of indium and manganese can improve performance in certain applications.
Optoelectronics:
Employed in the fabrication of devices such as LEDs and photodetectors, where the unique properties of the alloy can enhance device efficiency.
Magnetic Films:
Utilized in magnetic storage media and sensors, benefiting from the magnetic characteristics imparted by manganese.
Thin Film Coatings:
Applied in various coatings requiring a combination of electrical and magnetic properties, such as in certain sensors and MEMS devices.
Research and Development:
Investigated for advanced applications in novel electronic and magnetic materials, particularly in the development of next-generation devices.
