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Manganese Telluride Sputtering Targets

Manganese Telluride Sputtering Targets

Manganese Telluride Sputtering Targets
Product No NRE-43490
CAS No. 12032-89-2
Formula MnTe2
Molecular Weight 310.13
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Manganese Telluride Sputtering Targets

Introduction:

Manganese telluride (MnTe2) Sputtering targets are materials used in the deposition of thin films, notable for their unique semiconducting and magnetic properties. MnTe is a compound that combines manganese and tellurium, making it relevant in various advanced technological applications, especially in electronics and materials science.

Applications:

Semiconductor Devices:

MnTe is used in fabricating thin films for semiconductor devices, including transistors and diodes, benefiting from its favorable electronic properties.

Optoelectronics:

Employed in the production of photodetectors and light-emitting devices (LEDs), enhancing performance in optical applications.

Magnetic Materials:

Manganese telluride exhibits interesting magnetic properties, making it useful in spintronic devices and magnetic sensors, which leverage its ferromagnetic behavior.

Thermoelectric Applications:

MnTe can be used in thermoelectric materials, contributing to energy conversion technologies that harness temperature gradients.

Research and Development:

Often utilized in R&D to explore new material properties and applications, particularly in fields focused on next-generation electronics and energy solutions.

Thin Film Deposition: Used in physical vapor deposition (PVD) processes for creating thin films in semiconductor devices, sensors, and other electronic components.

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