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GeAsSe Sputtering Targets

GeAsSe Sputtering Targets

GeAsSe Sputtering Targets
Product No NRE-43428
CAS No. NA
Formula GeAsSe
Molecular Weight NA
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

GeAsSe Sputtering Targets

Gallium arsenide selenide (GeAsSe) sputtering targets are used in various advanced applications, particularly in optoelectronics and materials science. Here are some key applications.

Optoelectronic Devices

Photodetectors: GeAsSe is utilized in photodetectors, particularly in the infrared range, making it suitable for applications in imaging and sensing technologies.

Light-Emitting Diodes (LEDs): This material can be employed in the fabrication of LEDs, especially for infrared and visible light emissions.

Chalcogenide Glasses

Data Storage: GeAsSe is a component in chalcogenide glasses used in phase-change memory technologies, benefiting from their ability to change states between amorphous and crystalline forms.

Solar Cells

Thin-Film Photovoltaics: GeAsSe can be utilized as a light-absorbing layer in thin-film solar cells, enhancing energy conversion efficiency.

 Nonlinear Optical Applications

Frequency Conversion: The material’s nonlinear optical properties allow for its use in devices requiring frequency doubling and other nonlinear processes.

Thermal Imaging

Thermal Detectors: GeAsSe can be employed in thermal imaging applications due to its sensitivity to infrared radiation.

 Research and Development

Materials Science: GeAsSe is of interest in the study of new materials for potential applications in photonics, electronics, and sensors.

Summary

GeAsSe sputtering targets are valuable for a range of applications, especially in optoelectronics and data storage technologies. Their unique properties enable advancements in various high-tech fields, making them a significant material for ongoing research and development.

 

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