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Cobalt Silicide Sputtering Targets

Cobalt Silicide Sputtering Targets

Cobalt Silicide Sputtering Targets
Product No NRE-43380
CAS No. 12017-12-8
Formula CoSi2
Molecular Weight 115.104 g/mol
Purity >99.9%
Density 4.9 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Cobalt Silicide Sputtering Targets

Cobalt silicide (CoSi₂) sputtering targets are used in various applications due to their unique properties and benefits in thin-film deposition processes. Here’s an overview of key applications.

Semiconductor Manufacturing

Interconnects and Contacts:

Deployment: Cobalt silicide is used as a contact material in semiconductor devices.

Applications: Fabrication of metal silicide contacts, especially for source and drain regions in MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Cobalt silicide improves contact resistance and device performance.

Silicide Formation:

Deployment: Used in the formation of silicide layers on silicon substrates.

Applications: Reduction of contact resistance and improvement in the electrical performance of integrated circuits.

Thin-Film Technology

Thin-Film Deposition:

Deployment: Cobalt silicide sputtering targets are used to deposit thin films of cobalt silicide onto various substrates.

Applications: Production of thin films for electronic, optical, and other applications where precise film composition and thickness are required.

 Optoelectronic Devices

Photodetectors and Sensors:

Deployment: Cobalt silicide thin films can be used in optoelectronic devices.

Applications: Fabrication of photodetectors and sensors where cobalt silicide’s properties contribute to the efficiency and performance of the device.

Magnetic Devices

Magnetic Thin Films:

Deployment: Used in the production of magnetic thin films.

Applications: Fabrication of magnetic components for data storage, sensors, and other devices where magnetic properties are critical.

 Advanced Electronics

High-Performance Electronics:

Deployment: Utilized in the production of high-performance electronic components.

Applications: Devices requiring stable, high-conductivity metal layers, such as high-speed transistors and integrated circuits.

Microelectromechanical Systems (MEMS)

MEMS Devices:

Deployment: Cobalt silicide sputtering targets are used in the fabrication of MEMS devices.

Applications: Manufacturing of MEMS components, such as sensors and actuators, where cobalt silicide layers provide necessary electrical or mechanical properties.

Research and Development

Material Research:

Deployment: Used in research to explore new applications and properties of cobalt silicide.

Applications: Development of new materials and technologies leveraging cobalt silicide’s unique characteristics.

 

 

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