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Zinc Oxide doped with Magnesium Sputtering Targets

Zinc Oxide doped with Magnesium Sputtering Targets

Zinc Oxide doped with Magnesium Sputtering Targets
Product No NRE-43292
CAS No. NA
Formula Zn0.9Mg0.1O
Molecular Weight NA
Purity >99.9%
Density NA
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Zinc Oxide doped with Magnesium Sputtering Targets

Introduction:

Zinc oxide doped with magnesium sputtering targets is a semiconductor material that combines the properties of zinc oxide with the advantages of magnesium doping. This modification enhances the optical and electrical characteristics of ZnO, making it suitable for various applications in electronics, optoelectronics, and materials science. As a sputtering target is used to produce high-quality thin films with tailored properties for advanced technological applications.

Applications Transparent Conductive Oxides (TCOs)

ZnOis widely used in the fabrication of transparent conductive films, which are essential for applications in displays, touch screens, and solar cells, offering both high optical transparency and good electrical conductivity.

Optoelectronic Devices:

The material is utilized in optoelectronic applications, such as light-emitting diodes (LEDs) and laser diodes, where the doping improves efficiency and performance.

Semiconductor Devices:

ZnOthin films are employed in various semiconductor devices, including diodes and transistors, benefiting from enhanced electronic properties.

Photovoltaic Cells:

In solar energy applications, ZnOserves as a transparent conductive layer, contributing to improved charge transport and overall efficiency of photovoltaic cells.

Gas Sensors:

Doped ZnO exhibits increased sensitivity and selectivity for gas detection, making it suitable for environmental monitoring and safety applications.

Thin Film Transistors (TFTs):

ZnOis used in thin film transistors for display technologies, where it enhances performance and energy efficiency.

 

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