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Bismuth Manganate Sputtering Targets

Bismuth Manganate Sputtering Targets

Bismuth Manganate Sputtering Targets
Product No NRE-43201
CAS No. 12232-96-1
Formula Bi2.4MnO3
Molecular Weight NA
Purity >99.9%
Density 7.0 g/cm3
Thickness 3 mm ± 0.5mm(can be customized)
Diameter 50 mm ± 1mm(can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Bismuth Manganate Sputtering Targets

Bismuth lutetium iron gallate (BiLuFeGaO) sputtering targets are used to produce thin films of a material known for its interesting properties, particularly in the context of multiferroics and advanced electronic applications. Here are some key applications for bismuth lutetium iron gallate sputtering targets.

Multiferroic Devices

Memory Technologies: As a multiferroic material, bismuth lutetium iron gallate can be used in advanced memory devices such as magnetoelectric random-access memory (MeRAM) or ferroelectric random-access memory (FeRAM). These devices benefit from the coupling of electric and magnetic fields for non-volatile data storage.

Spintronics: The combination of ferroelectric and magnetic properties makes BiLuFeGaO suitable for spintronic applications, where electron spin and charge are manipulated for information processing and storage.

Piezoelectric Devices

Sensors: The piezoelectric properties of bismuth lutetium iron gallate make it useful in sensors that detect mechanical stress and convert it into an electrical signal. These sensors can be applied in various fields, including pressure, force, and vibration measurement.

Actuators: Actuators that convert electrical signals into mechanical movement can benefit from the piezoelectric characteristics of BiLuFeGaO. Applications include precision movement systems and micro-actuators.

 Photovoltaic Devices

Solar Cells: Thin films of BiLuFeGaO can be used in photovoltaic devices to enhance light absorption and energy conversion efficiency. This may improve the performance of solar cells or lead to new types of photovoltaic technologies.

 Catalysis

Chemical Reactions: The catalytic properties of bismuth lutetium iron gallate can be utilized in various chemical processes. Thin films of this material can be employed in catalytic converters and other catalytic applications in industrial settings.

Optoelectronic Devices

Photodetectors: The unique optical and electronic properties of BiLuFeGaO make it suitable for photodetectors, which convert light into electrical signals for use in imaging systems, optical communication, and sensing technologies.

Lasers and Optical Switches: Research into BiLuFeGaO also explores its potential in laser technology and optical switches, where its properties could enhance performance or introduce new functionalities.

High-Frequency Devices

RF and Microwave Applications: The material’s properties at high frequencies can be exploited in radio frequency (RF) and microwave devices, such as filters, resonators, and other components used in telecommunications and radar systems.

 

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