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Silicon Carbide Sputtering Target

Silicon Carbide Sputtering Target

Silicon Carbide Sputtering Target
Product No NRE-43137
CAS No. 409-21-2
Formula SiC
Molecular Weight 40.1 g/mol
Purity 99.9%
Density 3.2 g/cm3
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Electrical Resistivity NA
Electronegativity NA

Silicon Carbide Sputtering Target

Introduction:
Silicon carbide sputtering target is a compound of silicon and carbon known for its exceptional hardness, thermal conductivity, and chemical stability. It is often used in various advanced applications due to its unique properties.

Applications

Semiconductor Devices:

Used in the fabrication of high-power and high-frequency semiconductor devices, benefiting from SiC’s wide bandgap and thermal conductivity.

Thin Film Coatings:

Employed in producing thin films for protective coatings, enhancing hardness and wear resistance on various substrates.

LED Technology:

Investigated for use in light-emitting diodes (LEDs) and laser diodes, leveraging its efficient light-mitting properties.

Power Electronics:

Used in the manufacture of power electronic devices, such as MOSFETs and diodes, enabling efficient energy conversion and management.

Abrasives and Cutting Tools:

Silicon carbide is widely used in abrasives and cutting tools due to its hardness and ability to withstand high temperatures.

Research and Development:

SiC sputtering targets are utilized in research settings to explore new materials and applications in electronics and materials science.

Sensors:

Employed in the production of sensors, particularly for high-temperature and harsh environments, leveraging SiC’s stability and durability.

 

 

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