Indium Nitride Nanoparticles
Indium Nitride Nanoparticles
Indium Nitride Nanoparticles | |
Product No | NRE-5109 |
CAS | 25617-98-5 |
Purity | 99.9% |
Formula | InN |
APS | <100 nm (can be customized) |
Color | black |
Molecular Weight | 128.82 g/mol |
Density | 6.81 g/cm3 |
Melting Point | 1100 °C |
Boiling Point | NA |
Indium Nitride Nanoparticles
Indium Nitride is a semiconductor material composed of indium (In) and nitrogen (N) atoms. As a III-V semiconductor, it has unique electronic and optical properties that make it highly useful in various advanced technological applications. Indium Nitride, in its bulk form, has a direct bandgap and is known for its high electron mobility and efficient optoelectronic properties. Indium nitride nanoparticles, due to their small size, possess enhanced surface reactivity, increased electrical conductivity, and tunable bandgap properties, making them suitable for next-generation devices in various sectors.
Synthesis of Indium Nitride Nanoparticles
Indium Nitride nanoparticles can be synthesized through several methods, which include:
Chemical Vapor Deposition (CVD): A widely used technique to produce high-quality nanoparticles by reacting indium vapors with nitrogen or ammonia under controlled conditions.
Hydrothermal or Solvothermal Methods: These involve the growth of nanoparticles in a solvent at high pressure and temperature, providing control over the size and shape of the nanoparticles.
Properties
High Electron Mobility: Indium Nitride has a very high electron mobility compared to other III-V semiconductors, making InN nanoparticles ideal for high-speed electronics.
Direct Bandgap: InN has a narrow direct bandgap, typically around 0.7 eV (though this can be tuned in nanomaterials). This property makes InN ideal for infrared optoelectronics.
Quantum Effects: At the nanoscale, InN exhibits quantum confinement effects, leading to modified electronic and optical properties such as shifted bandgap, enhanced photoluminescence, and improved light absorption.
Optical Properties: InN nanoparticles show excellent absorption and emission properties, particularly in the infrared region, which can be tuned by controlling the size and morphology of the nanoparticles.
High Surface Area: The small size of InN nanoparticles provides a high surface-to-volume ratio, enhancing their chemical reactivity and making them valuable for catalytic processes, sensors, and energy applications.