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Hafnium Fluoride Nanoparticles

Hafnium Fluoride Nanoparticles

Hafnium Fluoride Nanoparticles
Product No NRE-5099
CAS 13709-52-9
Purity 99.9%
Formula HfF4
APS <100 nm (can be customized)
Color White
Molecular Weight 254.48 g/mol
Density 7.1 g/cm3
Melting Point 1000 °C
Boiling Point 970 °C

Hafnium Fluoride Nanoparticles

Hafnium fluoride nanoparticles is a chemical compound composed of hafnium (Hf) and fluorine (F). It is a highly stable and refractory material that has gained attention due to its unique properties, including high thermal stability, excellent corrosion resistance, and potential applications in advanced technologies.

Applications

Optical Coatings:

High-Performance Optical Components: Due to their high refractive index and optical transparency, hafnium fluoride nanoparticles are used in the production of optical coatings for devices like lenses, mirrors, and windows. These coatings improve light transmission and reflection in optical systems, particularly for applications in laser technology and UV optics.

Anti-Reflective Coatings: HfF₄ nanoparticles are used to create anti-reflective coatings for optical surfaces, such as those found in photovoltaic devices, lenses, and optical fibers. The high refractive index of hafnium fluoride helps reduce reflections and improve the efficiency of light-based technologies.

Aerospace and Defense:

Refractory Materials: Due to its high melting point and thermal stability, HfF₄ nanoparticles are used in aerospace applications, particularly in the creation of materials that can withstand extreme heat and pressure. HfF₄-based composites are applied in thermal protection systems for spacecraft, re-entry vehicles, and high-speed aircraft.

Coatings for High-Temperature Components: HfF₄ is used as a coating material for parts exposed to high temperatures in the aerospace industry, such as jet engine components or missile nozzles. The material helps to protect critical components from thermal degradation.

Semiconductor and Electronics:

Dielectric Materials: Hafnium fluoride is being investigated as a potential dielectric material in semiconductors. Its high dielectric constant and thermal stability make it useful in the production of insulating layers for transistors and other electronic components, particularly in high-performance integrated circuits (ICs).

Gate Dielectrics in Transistors: HfF₄ is considered as a potential material for gate dielectrics in metal-oxide-semiconductor field-effect transistors (MOSFETs), where it could help improve device performance by offering higher insulation properties than traditional materials.

 

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